Neutron detection structure

US7791031B2 · kind B2 · utility

Assignee

• HONEYWELL INTERNATIONAL INC. · US

Inventors

• Thomas Keyser · Plymouth, US
• Cheisan Yue · Roseville, US

Key dates

• Filing date: Jun 9, 2008
• Grant date: Sep 7, 2010
• Expiry date: Jun 9, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F77/306

Abstract

A neutron detection structure built from a Silicon-On-Insulator memory cell includes a conversion layer for converting incident neutrons into emitted charged particles, a device layer for receiving the emitted charged particles, a buried oxide layer separating the conversion layer from the device layer and directly adjacent to the conversion layer and the device layer, an isolation layer, a passivation layer formed on the isolation layer opposite the device layer and buried oxide layer, a carrier adhered by an adhesion layer to the passivation layer opposite the isolation layer, and a plurality of conductive contacts to provide electrical contact to the device layer. A corresponding method for fabricating such a structure includes permanently bonding a carrier to a passivated SOI SRAM wafer, removing an insulative substrate, depositing a conversion layer where at least a portion of the insulative substrate was removed, and forming at least one opening in the conversion layer and the buried oxide layer to provide at least one electrical contact to the device layer.