Patent · US Active

Integrated circuit including a dielectric layer

US7791149B2 · kind B2 · utility

7Cited by

2References

14Claims

0Family size

Assignee

Qimonda AG · DE

Inventor

Tim Boescke · Dresden, DE

Key dates

Filing date	Jul 10, 2008
Grant date	Sep 7, 2010
Priority date	—
Expiry date	Jul 10, 2028

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/691
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

An integrated circuit including a dielectric layer and a method for manufacturing. One embodiment provides a substrate having a first side and a second side and at least one dielectric layer. The dielectric layer includes a zirconium oxide and at least one dopant selected from the group consisting of hafnium and titanium and having a first side and a second side. The first side of the dielectric layer is arranged at least on a subarea of the first side of the semiconductor substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.