Power semiconductor component with trench-type second contact region
US7791176B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 22, 2008 |
| Grant date | Sep 7, 2010 |
| Priority date | — |
| Expiry date | Dec 22, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/112
Abstract
A power semiconductor component and method for producing it. The component has a semiconductor base body with a first doping and a pn junction formed by a contact region having a second doping with a doping profile in the base body. The second contact region is arranged at a second surface of the base body and extends into the base body. The base body has a trench-type cutout with an edge area and a base area, wherein the base area is formed as a second partial area of the second surface, and wherein the second contact region extends from the base area via the edge area as far as a first partial area. Furthermore, the pn junction has a curvature adjacent to the edge area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.