Logic circuit using metal-insulator transition (MIT) device
US7791376B2 · kind B2 · utility
11Cited by
2References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 7, 2007 |
| Grant date | Sep 7, 2010 |
| Priority date | — |
| Expiry date | Aug 7, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K19/20
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Provided is a logic circuit comprising a metal-insulator transition (MIT) device, including: an MIT device unit including an MIT thin film, an electrode thin film contacting the MIT thin film, and at least one MIT device undergoing a discontinuous MIT at a transition voltage VT; a power source unit including at least one power source applying power to the MIT device; and at least one resistor connected to the MIT device, wherein a logic operation is performed on a signal through the power source to output the result of the logic operation as an output signal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.