Memory device using abrupt metal-insulator transition and method of operating the same
US7791924B2 · kind B2 · utility
1Cited by
10References
6Claims
0Family size
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Key dates
| Filing date | Jun 29, 2006 |
| Grant date | Sep 7, 2010 |
| Priority date | — |
| Expiry date | Jul 31, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/51
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Provided are a memory device that undergoes no structural phase change, maintains a uniform thin film, and can perform a high-speed switching operation, and a method of operating the same. The memory device includes a substrate, an abrupt MIT material layer, and a plurality of electrodes. The abrupt MIT material layer is disposed on the substrate and undergoes an abrupt metal-insulator transition by an energy change between electrons. The plurality of electrodes are brought into contact with the abrupt MIT material layer and are melted by heat to form a conductive path on the abrupt MIT material layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.