Semiconductor laser
US7792170B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 18, 2005 |
| Grant date | Sep 7, 2010 |
| Priority date | — |
| Expiry date | Jun 6, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/02
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser having an oscillation wavelength λ (nm) and comprising at least a substrate, a first-conduction-type clad layer having an average refractive index N1cld, an active layer structure having an average refractive index NA, and a second-conduction-type clad layer having an average refractive index N2cld. This has a first-conduction-type subwave guide layer having an average refractive index N1SWG between the substrate and the first-conduction-type clad layer, and has a first-conduction-type low-refractive-index layer having an average refractive index N1LIL between the subwaveguide layer and the substrate. In this, the refractive indexes satisfy specific relational formulae. The semiconductor laser has a stable oscillation wavelength against the change of current/light output/temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.