Method of manufacturing a semiconductor device
US7794540B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 16, 2003 |
| Grant date | Sep 14, 2010 |
| Priority date | — |
| Expiry date | Nov 23, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02642
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Method of manufacturing a semiconductor device, in which on a region of silicon oxide (5) situated next to a region of monocrystalline silicon (4) at the surface (3) of a semiconductor body (1), a non-monocrystalline auxiliary layer (8) is formed. The auxiliary layer is formed in two steps. In the first step, the silicon body is heated in an atmosphere comprising a gaseous arsenic compound; in the second step it is heated in an atmosphere comprising a gaseous silicon compound instead of said arsenic compound. Thus, the regions of silicon oxide are provided with an amorphous or polycrystalline silicon seed layer in a self-aligned manner.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.