Vertical structure LED device and method of manufacturing the same
US7795054B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 4, 2007 |
| Grant date | Sep 14, 2010 |
| Priority date | — |
| Expiry date | Mar 3, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/018
Abstract
A method of manufacturing a vertical structure light emitting diode device, the method including: sequentially forming a first conductivity type III-V group compound semiconductor layer, an active layer, and a second conductivity type III-V group compound semiconductor layer on a substrate for growth; bonding a conductive substrate to the second conductivity type III-V group compound semiconductor layer; removing the substrate for growth from the first conductivity type III-V group compound semiconductor layer; and forming an electrode on an exposed portion of the first conductive III-V group compound semiconductor layer due to the removing the substrate for growth, wherein the bonding a conductive substrate comprises partially heating a metal bonding layer by applying microwaves to a bonding interface while bringing the metal bonding layer into contact with the bonding interface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.