Method of manufacturing light emitting diode package
US7795055B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 10, 2008 |
| Grant date | Sep 14, 2010 |
| Priority date | — |
| Expiry date | Sep 26, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/48091
Abstract
There is provided a method of manufacturing a light emitting diode chip, the method including: providing a light emitting diode chip; forming a phosphor layer on a top of the light emitting diode chip; and forming phosphors of a lattice structure on the phosphor layer by an inkjet process using an ink containing phosphor powder. There is also provided A method of manufacturing a light emitting diode package, the method including: forming a phosphor layer with a predetermined thickness; forming phosphors of a lattice structure on the phosphor layer by an ink jet process using an ink containing phosphor powder; and disposing the phosphor layer having the phosphors of the lattice structure formed thereon on a top of the light emitting diode chip.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.