Method of manufacturing semiconductor device
US7795115B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 27, 2006 |
| Grant date | Sep 14, 2010 |
| Priority date | — |
| Expiry date | Dec 7, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/09701
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention is directed to enhancement of reliability and a yield of a semiconductor device by a method of manufacturing the semiconductor device with a supporting body without making the process complex. A second insulation film, a semiconductor substrate, a first insulation film, and a passivation film are etched and removed in this order using a resist layer or a protection layer as a mask. By this etching, an adhesive layer is partially exposed in an opening. At this time, a number of semiconductor devices are separated in individual semiconductor dies. Then, as shown in FIG. 10, a solvent (e.g. alcohol or acetone) is supplied to the exposed adhesive layer through the opening to gradually reduce its adhesion and thereby a supporting body is removed from the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.