Semiconductor device and method of manufacturing the same
US7795133B2 · kind B2 · utility
5Cited by
1References
7Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 11, 2008 |
| Grant date | Sep 14, 2010 |
| Priority date | — |
| Expiry date | Dec 19, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
By covering inner surfaces of a wiring groove 26c and a via hole 27a with a fourth insulation film 25 containing porogen during a manufacturing process of a semiconductor device, an increase in the relative permittivity of the fourth insulation film 25 that is a low-permittivity film on the inner surfaces of the wiring groove 26c and the via hole 27a can be suppressed in a manufacturing process of a semiconductor device such as a barrier metal sputtering process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.