Method for fabricating a semiconductor device
US7795142B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 12, 2009 |
| Grant date | Sep 14, 2010 |
| Priority date | — |
| Expiry date | Apr 26, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1047
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a semiconductor device includes forming a dielectric film containing a porogen material above a substrate; removing a portion of the porogen material contained in the dielectric film so as to make a concentration of the porogen material higher in a part on a lower side of the dielectric film than in another part on a higher side of the dielectric film; forming an opening halfway in the dielectric film from which a portion of the porogen material has been removed to leave the dielectric film below a bottom of the opening; removing or polymerizing a remainder of the porogen material contained in the dielectric film; and etching the bottom of the opening after removing or polymerizing the remainder of the porogen material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.