Method for forming electrode structure for use in light emitting device and method for forming stacked structure
US7795144B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 27, 2008 |
| Grant date | Sep 14, 2010 |
| Priority date | — |
| Expiry date | Nov 7, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/032
Abstract
A method for forming an electrode structure in a light emitting device is disclosed. The method includes the steps of: forming a mask material layer having an opening; depositing a first material layer on the mask material layer and on a portion of a compound semiconductor layer exposed through the bottom of the opening by a physical vapor deposition method reducing the particle density so that the mean free path for collision is long; depositing a second material layer on the first material layer on the mask material layer, on the first material layer deposited on the bottom of the opening, and on a portion of the compound semiconductor layer exposed through the bottom of the opening by a vapor deposition method other than the physical vapor deposition method; and removing the mask material layer and the first and second material layers deposited on the mask material layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.