Patent · US Active

Non-volatile memory cell with enhanced filament formation characteristics

US7795606B2 · kind B2 · utility

40Cited by

3References

18Claims

0Family size

Assignee

Seagate Technology LLC · US

Inventors

Insik Jin · Edina, US
Yang Li · Palo Alto, US
Dadi Setiadi · Edina, US
Song S. Xue · Morristown, US

Key dates

Filing date	Oct 30, 2008
Grant date	Sep 14, 2010
Priority date	—
Expiry date	Oct 30, 2028

Classification

Technology area (CPC H)Electricity
CPC primaryH10N70/8833

Abstract

Method and apparatus for constructing a non-volatile memory cell, such as a modified RRAM cell. In some embodiments, a memory cell comprises a resistive storage layer disposed between a first electrode layer and a second electrode layer. Further in some embodiments, the storage layer has a localized region of decreased thickness to facilitate formation of a conductive filament through the storage layer from the first electrode to the second electrode.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.