Patent · US Active

Densely stacked and strain-compensated quantum dot active regions

US7795609B2 · kind B2 · utility

24Cited by
5References
20Claims
0Family size

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Inventors

Key dates

Filing dateAug 7, 2006
Grant dateSep 14, 2010
Priority date—
Expiry dateDec 30, 2028

Classification

  • Technology area (CPC B)Performing Operations; Transporting
  • CPC primaryB82Y20/00
  • WIPO fieldMicro-structural and nano-technology
  • WIPO sectorChemistry

Abstract

Embodiments provide a quantum dot active structure and a methodology for its fabrication. The quantum dot active structure includes a substrate, a plurality of alternating regions of a quantum dot active region and a strain-compensation region, and a cap layer. The strain-compensation region is formed to eliminate the compressive strain of an adjacent quantum dot active region, thus allowing quantum dot active regions to be densely-stacked. The densely-stacked quantum dot active region provides increased optical modal gain for semiconductor light emitting devices such as edge emitting lasers, vertical cavity lasers, detectors, micro-cavity emitters, optical amplifiers or modulators.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.