Semiconductor device
US7795619B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 27, 2005 |
| Grant date | Sep 14, 2010 |
| Priority date | — |
| Expiry date | May 27, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device, including the steps of: forming a shielding film 38 on a first insulating film 37; sequentially forming a second insulating film 39 and an amorphous semiconductor film 40 on the shielding film 38; melting the amorphous semiconductor film 40 at least in portions to be channels of thin-film transistors by irradiating an energy beam onto the amorphous semiconductor film 40, and converting the amorphous semiconductor film 40 into a polycrystalline semiconductor film 41; sequentially forming a gate insulating film 43a and a gate electrode 44a on the polycrystalline semiconductor film 41 on the channels; and forming source and drain regions 41a in the polycrystalline semiconductor film 41 on sides of the gate electrode 44a, and forming a TFT 60 by use of the source and drain regions 41a, the gate insulating film 43a, and the gate electrode 44a.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.