Wiring substrate and method of manufacturing thereof, and thin film transistor and method of manufacturing thereof
US7795730B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 2, 2007 |
| Grant date | Sep 14, 2010 |
| Priority date | — |
| Expiry date | Dec 12, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention includes a first step for forming a first conductive layer composed of a high melting point metal to be in contact with an insulating layer; and a second step for forming a second conductive layer by discharging a composition containing a conductive material so as to be in contact with the first conductive layer. The first conductive layer is formed prior to forming the second conductive layer by droplet discharging, and hence, adhesiveness and peel resistance of the second conductive layer are improved. Furthermore, the insulating layer is covered with the first conductive layer, thereby preventing damage or destruction of the insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.