Patent · US Active

High-power optical burn-in

US7795896B2 · kind B2 · utility

1Cited by
3References
9Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 13, 2008
Grant dateSep 14, 2010
Priority date
Expiry dateJan 7, 2029

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01S5/22
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

Semiconductor lasers are aged to identify weak or flawed devices, resulting in improved reliability of the remaining devices. The lasers can be aged using a high-power optical burn-in that includes providing a high drive current to the lasers for a period of time, and maintaining the ambient temperature of the lasers at a low temperature. After the high-power optical burn-in, the output of the lasers can be measured to determine if the lasers are operating within specifications. Those that are not can be discarded, while those that are can be further aged using a high-temperature thermal burn-in that includes providing a drive current to the lasers while maintaining the ambient temperature of the lasers at a high-temperature.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.