Method of erasing a flash EEPROM memory
US7796443B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 12, 2008 |
| Grant date | Sep 14, 2010 |
| Priority date | — |
| Expiry date | Mar 1, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/14
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The invention is a new method for erasing a flash EEPROM memory device. The memory device has a first semiconductor region within a second semiconductor region, source and drain regions in the first semiconductor region, a well terminal inside the first semiconductor region, a charge storing layer electrically isolated from the first semiconductor region by a dielectric layer, and a control terminal electrically isolated from the charge storing layer by a inter layer dielectric. The method comprises the steps of: applying a first voltage bias of first polarity to the well terminal; allowing a first time period to elapse; applying a second voltage bias of second polarity opposite to the first polarity to the control terminal; resetting the first voltage bias to zero; allowing a second time period to elapse; and resetting the second voltage bias to zero.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.