Process for the manufacturing of dense silicon carbide
US7799375B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 29, 2005 |
| Grant date | Sep 21, 2010 |
| Priority date | — |
| Expiry date | Feb 27, 2027 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B2235/9607
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A method of producing a densified SiC article is provided. Near-net shape porous silicon carbide articles are produced and densified using the developed method. A substantial number of pores within the porous near-net shape silicon carbide article are filled (impregnated) with a carbon precursor, a silicon carbide precursor, or a mixture of both. The carbon precursor can be liquid or gas. The filled SiC preform is heated to convert the carbon or silicon carbide precursor to porous carbon or SiC preform inside the pores of the net-shape silicon carbide article. The impregnation/pyrolysis cycle is repeated until the desired amount of carbon and/or silicon carbide is achieved. In case of a carbon or a mixture of silicon carbide/carbon precursor is used, the pyrolyzed near-net shape silicon carbide article is then contacted with silicon in an inert atmosphere. The silicon diffuses through the pyrolyzed near-net shape silicon carbide article and reacts with the carbon contained within the pores of the porous SiC preform producing a new phase of silicon carbide within the pores of the near-net shape silicon carbide article. The produced silicon carbide is a near-net dense silicon carbide…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.