Polyhedral oligomeric silsesquioxane thiophosphate containing photoconductors
US7799494B2 · kind B2 · utility
7Cited by
16References
35Claims
0Family size
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Key dates
| Filing date | Nov 28, 2006 |
| Grant date | Sep 21, 2010 |
| Priority date | — |
| Expiry date | Jul 22, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03G5/0507
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photoconductor containing an optional supporting substrate, a photogenerating layer, and a charge transport layer which includes a mixture of a polyhedral oligomeric silsesquioxane (POSS)-containing material and a thiophosphate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.