Thin film transistor, method of manufacturing the same and flat panel display having the thin film transistor
US7799597B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 19, 2006 |
| Grant date | Sep 21, 2010 |
| Priority date | — |
| Expiry date | Jul 25, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K10/466
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A thin film transistor includes: a gate electrode; source and drain electrodes insulated from the gate electrode; an organic semiconductor layer that is insulated from the gate electrode and electrically connected to the source and drain electrodes; an insulating layer that insulates the gate electrode from the source and drain electrodes or the organic semiconductor layer; a hydrophobic layer which covers the source and drain electrodes or insulating layer and has an opening that defines a region corresponding to the organic semiconductor layer; and a hydrophilic layer formed in the opening of the hydrophobic layer, wherein the organic semiconductor layer is formed on the hydrophilic layer. The thin film transistor includes the organic semiconductor layer having a highly precise pattern that is formed without an additional patterning process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.