Semiconductor sensor having a front-side contact zone

US7799606B2 · kind B2 · utility

Assignee

• Endress+Hauser Conducta Gesellschaft fuer Mess- und Regeltechnik mbH + Co. KG · DE

Inventors

• Torsten Pechstein · Radebeul, DE
• Robert Scholz · Midland, CA

Key dates

• Filing date: Dec 6, 2003
• Grant date: Sep 21, 2010
• Expiry date: Feb 16, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

An ion-sensitive sensor arrangement includes: a semiconductor chip having a first surface, which has a media-sensitive region and at least one, first, electrical contact surface; and a support having a second surface, which faces the first surface of the semiconductor chip. An opening is provided, which aligns with the sensitive region, and at least one, second, electrical contact surface, which overlaps, or aligns with, the at least one, first, electrical contact surface. Between the support and the semiconductor chip, a preferably elastic, anisotropic conductor is arranged, which produces a conducting connection between the at least one, first, contact surface and the at least one, second, contact surface, and which has a traversing opening, which aligns with the opening, so that the sensitive region of the semiconductor chip can be contacted through the opening by an analyte. The preferably elastic, anisotropic conductor seals the region outside of the opening against contamination with the analyte.