Semiconductor device and method of manufacturing the same
US7799633B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 31, 2007 |
| Grant date | Sep 21, 2010 |
| Priority date | — |
| Expiry date | Nov 20, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/766
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Provided are a semiconductor device and a method of manufacturing the semiconductor device, for example, a semiconductor device using carbon nanotubes or nanowires as lower electrodes of a capacitor, and a method of manufacturing the semiconductor device. The semiconductor device may include a lower electrode including a plurality of tubes or wires on a semiconductor substrate, a dielectric layer on the surface of the lower electrode, and an upper electrode on the surface of the dielectric layer, wherein the plurality of tubes or wires radiate outwardly from each other centering on the lower portion of the plurality of tubes or wires. Thus, the off current of the capacitor may be increased by increasing the surface area of the lower electrodes of the capacitor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.