Fabrication of semiconductor metamaterials
US7799663B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 8, 2004 |
| Grant date | Sep 21, 2010 |
| Priority date | — |
| Expiry date | Dec 7, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24273
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of fabricating a semiconductor metamaterial is provided, comprising providing a sample of engineered microstructured material that is transparent to electromagnetic radiation and comprises one or more elongate, high aspect ratio voids, passing through the voids a high pressure fluid comprising a semiconductor material carried in a carrier fluid, and causing the semiconductor material to deposit onto the surface of the one or more voids of the engineered microstructured material to form the metamaterial. Many microstructured materials and semiconductor materials can be used, together with various techniques for controlling the location, spatial extent, and thickness of the deposition of the semiconductor within the microstructured material, so that a wide range of different metamaterials can be produced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.