Semiconductor device
US7800155B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 20, 2007 |
| Grant date | Sep 21, 2010 |
| Priority date | — |
| Expiry date | Apr 1, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a gate insulating film formed on a semiconductor substrate, a first gate electrode formed on the gate insulating film, a second gate electrode formed on the gate insulating film between the first gate electrode and a contact plug, a first silicon oxide film formed above the substrate between the first and second gate electrodes, a first silicon nitride film formed along the substrate and a side surface of the second gate electrode between the contact plug and the second gate electrode, a second silicon oxide film formed on the first silicon oxide film, the first gate electrode and the second gate electrode, the second silicon oxide film including an upper surface having a height greater than the height of a first upper surface of the first gate electrode relative to the substrate, and a second silicon nitride film formed on the second silicon oxide film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.