Power semiconductor device
US7800168B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 3, 2007 |
| Grant date | Sep 21, 2010 |
| Priority date | — |
| Expiry date | May 14, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/142
Abstract
A semiconductor device includes a base layer of a first conductivity type, a barrier layer of a first conductivity type formed on the base layer, a trench formed from the surface of the barrier layer to such a depth as to reach a region in the vicinity of an interface between the barrier layer and the base layer, a gate electrode formed in the trench via a gate insulating film, a contact layer of a second conductivity type selectively formed in a surface portion of the barrier layer, a source layer of the first conductivity type selectively formed in the surface portion of the barrier layer so as to contact the contact layer and a side wall of the gate insulating film in the trench, and a first main electrode formed so as to contact the contact layer and the source layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.