Semiconductor apparatus having temperature sensing diode
US7800195B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 26, 2008 |
| Grant date | Sep 21, 2010 |
| Priority date | — |
| Expiry date | Mar 14, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/68
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A semiconductor apparatus is provided. The semiconductor apparatus includes a semiconductor substrate and a temperature sensing diode that is disposed on a surface part of the semiconductor substrate. A relation between a forward current flowing through the temperature sensing diode and a corresponding voltage drop across the temperature sensing diode varies with temperature. The semiconductor apparatus further includes a capacitor that is coupled with the temperature sensing diode, configured to reduce noise to act on the temperature sensing diode, and disposed such that the capacitor and the temperature sensing diode have a layered structure in a thickness direction of the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.