Semiconductor device having a trim cut and method of evaluating laser trimming thereof
US7800479B2 · kind B2 · utility
1Cited by
7References
1Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 18, 2008 |
| Grant date | Sep 21, 2010 |
| Priority date | — |
| Expiry date | Jan 2, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49099
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of evaluating laser trimming of a semiconductor device having a thin film resistor is disclosed. The method includes the steps of providing the thin film resistor and laser trimming the thin film resistor by creating a first trim cut. The first trim cut bisects the thin film resistor such that the thin film resistor is divided into a first portion and a second portion. Also, the method involves measuring the insulation resistance of the thin film resistor. In addition, the method involves evaluating the trim cut based on the measured insulation resistance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.