High-pressure sensor device and method for manufacturing same
US7802481B2 · kind B2 · utility
4Cited by
10References
30Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 14, 2006 |
| Grant date | Sep 28, 2010 |
| Priority date | — |
| Expiry date | Jun 14, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01L19/148
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A high-pressure sensor device has a pressure sensor element and an electric circuit, in particular in the form of a semiconductor component, the pressure sensor element having a membrane deformable under the effect of pressure, and a functional layer, which experiences a change in its electrical properties when deformed, and which has at least one electric terminal area, and the design and the manufacturing process being simplified in particular by the fact that the semiconductor component is directly connected to the electric terminal area via a solder layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.