Process for producing siox particles
US7803340B2 · kind B2 · utility
1Cited by
2References
3Claims
0Family size
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Key dates
| Filing date | Sep 22, 2005 |
| Grant date | Sep 28, 2010 |
| Priority date | — |
| Expiry date | Jul 3, 2027 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01P2004/64
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
Crystalline silicon particles of nanometer order usable as a semiconductor element are provided by a method for producing SiOx particles, comprising irradiating SiOx (X is 0.5 or more and less than 2.0) particles each including therein an amorphous silicon particle having a particle diameter of 0.5 to 5 nm with light, and preferably a laser beam, to produce SiOx (X is 0.5 or more and less than 2.0) particles each including therein a crystalline silicon particle having a particle diameter of 1 to 10 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.