Semiconductor light-emitting device and a method for manufacturing the same
US7803645B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 27, 2006 |
| Grant date | Sep 28, 2010 |
| Priority date | — |
| Expiry date | Nov 1, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8215
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention is to provide a light-emitting device, a laser diode, formed without using the mechanical cleavage, and a process for manufacturing the device. The process comprises, after stacking semiconductor layers of the first cladding layer, the active layer, and the second cladding layer, a forming of a groove to define the laser resonator, the depth of which reaches the substrate, and the mass-transportation, within the groove, from the side surface of the groove in a portion of the substrate and the first cladding layer to the facet of the active layer and the second cladding layer. Since the facet layer thus transported reflects the crystal orientation of the side of the groove, the crystal quality of the facet layer can be maintained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.