Variable resistance non-volatile memory cells and methods of fabricating same
US7803654B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 27, 2007 |
| Grant date | Sep 28, 2010 |
| Priority date | — |
| Expiry date | Oct 15, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C13/0004
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Methods of fabricating integrated circuit memory cells and integrated circuit memory cells are disclosed. Formation of an integrated circuit memory cell include forming a first electrode on a substrate. An insulation layer is formed on the substrate with an opening that exposes at least a portion of a first electrode. An amorphous variable resistivity material is formed on the first electrode and extends away from the first electrode along sidewalls of the opening. A crystalline variable resistivity material is formed in the opening on the amorphous variable resistivity material. A second electrode is formed on the crystalline variable resistivity material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.