Organic thin-film transistor substrate and fabrication method therefor
US7803669B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 21, 2007 |
| Grant date | Sep 28, 2010 |
| Priority date | — |
| Expiry date | Jul 11, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/939
Abstract
An organic thin film transistor substrate includes a gate line formed on a substrate, a data line intersecting the gate line and defining a subpixel area, an organic thin film transistor including a gate electrode connected to the gate line, a source electrode connected to the data line, a drain electrode facing the source electrode, and an organic semiconductor layer forming a channel between the source and drain electrodes, a passivation layer parallel with the gate line, for covering the organic semiconductor layer and peripheral regions of the organic semiconductor layer, and a bank insulating layer for determining the position of the organic semiconductor layer and the passivation layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.