Method of manufacturing a thin film transistor substrate
US7803673B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 12, 2007 |
| Grant date | Sep 28, 2010 |
| Priority date | — |
| Expiry date | Jan 26, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6729
Abstract
A method of manufacturing a thin film transistor (“TFT”) substrate includes forming a gate insulating film and an active layer on a substrate, forming a data metal layer including a first, second, and third metal layers on the active layer, forming a first photoresist pattern on the data metal layer, dry-etching the third metal layer by using the first photoresist pattern, simultaneously dry-etching the second and first metal layers by using the first photoresist pattern, dry-etching the active layer by using the first photoresist pattern, etching the first photoresist pattern to form a second photoresist pattern by which the channel region is removed and forming a source electrode and a drain electrode by dry-etching the channel region of the data metal layer by using the second photoresist pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.