Metal silicide nanowires and methods for their production
US7803707B2 · kind B2 · utility
4Cited by
4References
39Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 17, 2006 |
| Grant date | Sep 28, 2010 |
| Priority date | — |
| Expiry date | Jun 7, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/298
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides metal silicide nanowires, including metallic, semiconducting, and ferromagnetic semiconducting transition metal silicide nanowires. The nanowires are grown using either chemical vapor deposition (CVD) or chemical vapor transport (CVT) on silicon substrates covered with a thin silicon oxide film, the oxide film desirably having a thickness of no greater than about 5 nm and, desirably, no more than about 2 nm (e.g., about 1-2 nm). The metal silicide nanowires and heterostructures made from the nanowires are well-suited for use in CMOS compatible wire-like electronic, photonic, and spintronic devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.