Solid-state light source
US7804099B2 · kind B2 · utility
12Cited by
2References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 3, 2008 |
| Grant date | Sep 28, 2010 |
| Priority date | — |
| Expiry date | Dec 3, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/872
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A solid-state light source includes at least one stack of light emitting elements. The elements are an inorganic light emitting diode chip and at least one wavelength conversion chip or the elements are a plurality of light emitting diode chips and one or more optional wavelength conversion chips. The wavelength conversion chip may include an electrical interconnection means. The light emitting diode chip may include at least one GaN-based semiconductor layer that is at least ten microns thick and that is fabricated by hydride vapor phase epitaxy. A method is described for fabricating the solid-state light source.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.