Semiconductor device and method for adjusting characteristics thereof
US7804111B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 10, 2006 |
| Grant date | Sep 28, 2010 |
| Priority date | — |
| Expiry date | Mar 13, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2217/0018
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The object of the invention is to provide a semiconductor device including signal-transmission interconnections preferable for transmitting high frequency signal and capability to adjust characteristics of the above signal-transmission interconnections. A semiconductor device according to the present invention consists of a signal-transmission interconnection 20 for transmission of signals, a MOS capacitance element 10 having a gate electrode connected to the signal-transmission interconnection 20, a first voltage-applying interconnection 30 connected to a source and a drain of the MOS capacitance element 10 and applying a voltage to the source and the drain of the MOS capacitance element 10, a second voltage-applying interconnection 40 connected to a well of the MOS capacitance element 10, and applying a voltage to the well of said first MOS capacitance element 10. Jitters occurring in the signal-transmission interconnection 20 can be adjusted by adjusting each of voltages of the first voltage-applying interconnection 30 and the second voltage-applying interconnection 40.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.