Apparatus and method to generate plasma
US7804250B2 · kind B2 · utility
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36Claims
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Key dates
| Filing date | Mar 9, 2007 |
| Grant date | Sep 28, 2010 |
| Priority date | — |
| Expiry date | Jun 9, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32091
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An apparatus and method to generate plasma which can be applied to semiconductor processing. The apparatus includes a chamber having a plasma generating space defined therein, a lower electrode positioned within the chamber, an upper electrode facing the lower electrode and disposed within the chamber to constitute a first plasma generating source, a second plasma generating source positioned at a higher location than that of a lower surface of the upper electrode and disposed at an outer circumference of the upper electrode, and a power supply to supply power to the first and second plasma generating sources.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.