Phase change memory device having Schottky diode and method of fabricating the same
US7804703B2 · kind B2 · utility
5Cited by
1References
18Claims
0Family size
Assignee
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Key dates
| Filing date | May 14, 2008 |
| Grant date | Sep 28, 2010 |
| Priority date | — |
| Expiry date | Nov 8, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/826
Abstract
A phase change memory device includes wordlines extending along a direction on a semiconductor substrate. Low concentration semiconductor patterns are disposed on the wordlines. Node electrodes are disposed on the low concentration semiconductor patterns. Schottky diodes are disposed between the low concentration semiconductor patterns and the node electrodes. Phase change resistors are disposed on the node electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.