Patent · US Active

Method of producing a thin-film resonator

US7805820B2 · kind B2 · utility

7Cited by

7References

9Claims

0Family size

Assignee

EPCOS AG · DE

Inventors

Christoph Eggs · Rattenkirchen, DE
Ansgar Schäufele · Munich, DE
Martin Woelky · Holzkirchen, DE

Key dates

Filing date	Dec 13, 2005
Grant date	Oct 5, 2010
Priority date	—
Expiry date	Aug 27, 2027

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10T29/49155
WIPO fieldBasic communication processes
WIPO sectorElectrical engineering

Abstract

A thin-film resonator and a method for producing a thin-film component includes, for the purpose of structuring an upper first dielectric layer, a mask that comprises a second dielectric layer facing the upper dielectric layer and a photoresist layer. Initially, the photoresist layer that serves as photomask during the structuring of the second dielectric layer is structured. The structures of the second dielectric layer, together with the structures of the photoresist layer located thereabove, form a mask that is used for structuring the first dielectric layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.