Field effect transistor and its manufacturing method
US7807496B2 · kind B2 · utility
4Cited by
1References
15Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 2, 2005 |
| Grant date | Oct 5, 2010 |
| Priority date | — |
| Expiry date | Aug 24, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K10/466
Abstract
To provide a method of easily producing TFT in which the orientation of channel molecules or wires is enhanced, compared with conventional type organic TFT at a low price, a lyophilic TFT pattern encircled by a lyophobic area is formed on a substrate, spontaneous movement is made in a droplet containing organic molecules or nanowires dropped in a channel region by characterizing the form of the pattern, and the organic molecules or the nanowires are oriented in the channel region by the movement.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.