Back end thin film capacitor having plates at thin film resistor and first metallization layer levels
US7807540B2 · kind B2 · utility
0Cited by
6References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 23, 2010 |
| Grant date | Oct 5, 2010 |
| Priority date | — |
| Expiry date | Feb 23, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/692
Abstract
An integrated circuit back end capacitor structure includes a first dielectric layer on a substrate, a thin film bottom plate on the first dielectric layer, and a second dielectric layer on the first dielectric layer and the bottom plate, and a thin film top plate disposed on the second dielectric layer. The thin film top plate and bottom plate are composed of thin film resistive layers, such as sichrome, which also are utilized to form back end thin film resistors having various properties. Interconnect conductors of a metallization layer contact the top and bottom plates through corresponding vias.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.