Semiconductor device and methods of forming the same
US7807571B2 · kind B2 · utility
1Cited by
8References
31Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 20, 2007 |
| Grant date | Oct 5, 2010 |
| Priority date | — |
| Expiry date | Aug 27, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An example embodiment provides a method of forming a conductive pattern in a semiconductor device. The method includes forming one or more dielectric layers over a first conductive pattern formed on a substrate; forming an opening in the one or more dielectric layers to expose a portion of the first conductive pattern, forming a growth promoting layer over the exposed portion of the first conductive pattern and the one or more dielectric layers, forming a growth inhibiting layer over a portion of the growth promoting layer, and forming the second conductive layer in the opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.