Method of fabricating a semiconductor device
US7807585B2 · kind B2 · utility
0Cited by
8References
21Claims
0Family size
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Key dates
| Filing date | Nov 2, 2009 |
| Grant date | Oct 5, 2010 |
| Priority date | — |
| Expiry date | Nov 2, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/906
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A dielectric insulating film including HfO or the like is formed by: cleaning a surface of a semiconductor substrate by exposing the substrate surface to a fluorine radical; performing hydrogen termination processing with a fluorine radical or a hydride (SiH4 or the like); sputtering Hf or the like; and then performing oxidation/nitridation. These steps are carried out without exposing the substrate to atmosphere, thereby making it possible to obtain a C-V curve with less hysteresis and realize a MOS-FET having favorable device characteristics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.