Thin film transistor, display device having thin film transistor, and method for manufacturing the same
US7808000B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 1, 2008 |
| Grant date | Oct 5, 2010 |
| Priority date | — |
| Expiry date | Oct 30, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
Abstract
A thin film transistor with excellent electric characteristics, a display device having the thin film transistor, and a method for manufacturing the thin film transistor and the display device are proposed. The thin film transistor includes a gate insulating film formed over a gate electrode, a microcrystalline semiconductor film formed over the gate insulating film, a buffer layer formed over the microcrystalline semiconductor film, a pair of semiconductor films to which an impurity element imparting one conductivity type is added and which are formed over the buffer layer, and wirings formed over the pair of semiconductor films to which the impurity element imparting one conductivity type is added. A part of the gate insulating film or the entire gate insulating film, and/or a part of the microcrystalline semiconductor or the entire microcrystalline semiconductor includes an impurity element which serves as a donor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.