Heterogeneous integration of low noise amplifiers with power amplifiers or switches

US7808016B2 · kind B2 · utility

Assignee

• Teledyne Licensing, LLC · US

Inventors

• Berinder Brar · Newbury Park, US
• Joshua I. Bergman · Thousand Oaks, US
• Amal Ikhlassi · Thousand Oaks, US
• Gabor Nagy · Redmond, US
• Gerard J. Sullivan · Newbury Park, US

Key dates

• Filing date: Sep 14, 2006
• Grant date: Oct 5, 2010
• Expiry date: Apr 30, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/05

Abstract

A transistor heterogeneously integrating a power amplifier or switch with a low-noise amplifier having a substrate wafer selected from a group consisting of Gallium Arsenide (GaAs), Indium Phosphate (InP) and Gallium Antimonide (GaSb), the substrate wafer having a first end and a second end, a conducting layer above the first end of the substrate wafer, an isolation implant providing lateral isolation in the conducting layer, a first active layer deposited above the conducting layer and configured for the low-noise amplifier, and a buffer layer deposited above the conducting layer and configured for the low-noise amplifier.