Method for manufacturing a field effect transistor having a field plate
US7811872B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 8, 2008 |
| Grant date | Oct 12, 2010 |
| Priority date | — |
| Expiry date | Oct 10, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
Abstract
An opening for forming a gate electrode is provided by a first photoresist pattern formed on an insulating film. Reactive ion etching by inductively coupled plasma is applied to the insulating film through the first photoresist pattern as a mask to thereby expose the surface of a GaN semiconductor layer, evaporating thereon a gate metal such as NiAu, thereby forming the gate electrode by self-aligned process. This prevents an oxidized film from being formed on the surface of the semiconductor layer. After the gate electrode is formed, a second photoresist pattern is formed to form a field plate on the gate electrode and the insulating film through the second photoresist pattern as a mask. Thereby, Ti having a high adhesiveness with an insulating film made of SiN or the like can be used as a field plate metal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.