Production of a hexagonal boron nitride crystal body capable of emitting out ultraviolet radiation
US7811909B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 22, 2008 |
| Grant date | Oct 12, 2010 |
| Priority date | — |
| Expiry date | May 22, 2028 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01P2004/03
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The invention has for its object to provide a process of synthesizing high-purity hBN crystal bodies on a robust substrate even under normal pressure.The inventive process of producing hexagonal boron nitride crystal bodies is characterized by comprising a preparation step of preparing a mixture of a boron nitride raw material and a metal solvent comprising a transition metal, a contact step of bringing a sapphire substrate in contact with the mixture, a heating step of heating the mixture, and a recrystallization step of recrystallizing at normal pressure a melt obtained in the heating step. It is also characterized by using as the metal solvent a transition metal selected from the group consisting of Fe, Ni, Co, and a combination thereof, and at least one substance selected from the group consisting of Cr, TiN and V without recourse to any sapphire substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.