Ion source element, ion implanter having the same and method of modifying the same
US7812320B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 15, 2006 |
| Grant date | Oct 12, 2010 |
| Priority date | — |
| Expiry date | Jul 20, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31701
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An ion source element, an ion implanter having the ion source element and a method of modifying the ion source element are provided. In the ion source element, a chamber may have a cavity divided into a plurality of inner sections configured substantially perpendicularly to an axis defined through centers of ends of the cavity. The larger inner sections may be at, or near, a center of the cavity and become smaller toward the ends of the cavity. A filament may be disposed at one end of the chamber to emit thermal electrons. A repeller may extend into the chamber through the other end of the chamber. An inlet may be formed in a first cavity wall to introduce gas having a dopant species into the chamber. A beam slit may be formed in a second cavity wall, opposite the inlet, of the chamber to extract an ionized species of the gas from the chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.